Posted by & filed under Industry, Tech Manufacturing News.

memory technology, SSD technology

Samsung Electronics pioneers flash memory innovations in light of addressing next-generation data processing and storage challenges. The firm has recently announced Vertical NAND, or V-NAND technologies to keep up with the rapid increase of data-intensive applications across industries that utilize AI (artificial intelligence) and IoT (Internet of Things).

Samsung’s V-NAND memory solutions

The memory solutions along with SSDs (solid state drives) are aimed towards enabling the most data-intensive tasks of today, including high-performance computing, parallel computing, machine learning, and real-time analysis of information. Gyoyoung Jin, Memory Business head and executive VP at Samsung stated that V-NAND offers smarter solutions for greater value through accelerated processing speeds, upped system scalability and ultra-low latency for the most demanding applications based on the cloud.

V-NAND Core Memory Technologies

In 2013, Samsung unveiled the industry’s first 3D NAND. The company mentioned back then that they’re working on the one terabit capacity using V-NAND structure. Now, Samsung Electronics leverages its expertise to greatly enhance processing of information-rich data and arrival of the 1Tb V-NAND chip is expected by next year.

Improving Server Storage Capacity With NGSFF

Samsung is sampling on what’s again the industry’s first NGSFF (Next Generation Small Form Factor) SSD of 16 terabytes designed for 1U rack servers. It will substantially improve space utilization as well as IOPS (input/output operations per second). The new NGSFF in place of M.2 drives in 1U servers increases memory storage to 4x the system’s capacity. Samsung is set to begin mass production by the fourth quarter of the year.

Z-SSD To Optimize System Response Times

Last year’s introduction of Samsung’s Z-SSD technology was followed by the introduction of the SZ985 which requires merely 15 microseconds of read latency time, or 1/7 of the NVMe SSD read latency. The high-performance, ultra-low latency feature is designed for use in data centers tackling extremely large tasks like “big data” analytics and high-performance server caching.

Samsung Key Value SSD Technology

The significant increase in complexity of data processing is relative to the spike in the use of social media services and IoT applications leading to the creation of object data, i.e. text, image, audio and video. SSDs typically convert object data into blocks involving the implementation of LBA and PBA (logical/physical block addressing) processes.

Samsung’s new approach in the Key Value skips the tedious process and blocks altogether by assigning a “key” to each “value.” The key enables addressing data location directly, which then enables SSDs to scale-up and scale-out in terms of both performance and capacity. Reduction in redundant steps ultimately result to faster inputs and outputs of data and increased TCO (total cost of ownership).


Comments are closed.